场效应管衬底与源极短接和直接接地有什么区别_百度知道
场效应管衬底与源极短接和直接接地有什么区别
提问者采纳
随着Vgs的增大。当栅极电压Vgs大于某一临界位以后://h，便可以感应出足够的负电荷，把源极S和衬底接地，把开始形成导电沟道所需的Vgs称为开启电压(夹断电压同理)，因为它处于P型衬底的半导体中)，从而把源极S与漏极D连接起来.hiphotos。Vgs变化导致栅极和衬底的电压变化。请看下图的场效应管特性曲线，在栅源间加上正电压Vgs，会影响三极管的工作特性
其他类似问题
您可能关注的推广
场效应管的相关知识
为您推荐：
等待您来回答
下载知道APP
随时随地咨询
出门在外也不愁文章摘要信息
发光学报&2013,&34(3)&340-344&&ISSN:&&CN:&22-1116/O4
器件制备及器件物理
衬底弯曲度对GaN基LED芯片性能的影响
杨德超1, 梁红伟2,4, 邱宇2, 宋世巍2, 申人升2, 柳阳2, 夏晓川2, 俞振南3, 杜国同1,2
1. 吉林大学 电子科学与工程学院, 吉林 长春 130023;
2. 大连理工大学 物理与光电工程学院, 辽宁 大连 116024;
3. 浙江水晶光电科技股份有限公司, 浙江 台州 318015;
4. 信息功能材料国家重点实验室 中国科学院上海微系统与信息技术研究所, 上海 200050
利用低压MOCVD系统在弯曲度值不同的蓝宝石衬底上生长了GaN基LED外延结构并制作芯片。测量了芯片的主要电学和光学参数,并分析了衬底弯曲度值对芯片性能的影响。分析结果表明:存在弯曲度的衬底预先弛豫了外延层中的部分应力,改善了外延层的质量,从而提高了LED芯片的性能。随着衬底弯曲度值的逐渐增加,下层GaN对有源层中InGaN材料的压应力作用不断减小,导致芯片的主波长逐渐发生蓝移。
The Influence of Substrate Bow on The Properties of GaN-based Light Emitting Diode Chips
YANG De-chao1, LIANG Hong-wei2,4, QIU Yu2, SONG Shi-wei2, SHEN Ren-sheng2, LIU Yang2, XIA Xiao-chuan2, YU Zhen-nan3, DU Guo-tong1,2
1. College of Electronic Science and Engineering, Jilin University, Changchun 130023, C
2. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, C
3. Zhejiang Crystal-Optech Co., Ltd., Taizhou 318015, C
4. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
GaN-based light emitting diodes (LEDs) were grown on the sapphire substrates with different bow values by low pressure metal organic chemical vapor deposition (MOCVD). LED chips were fabricated and the optic and electronic parameters were characterized. The influence of different bow values on the performances of LED was investigated. The analysis results show that the substrates with bow could relax part of the stress in the epilayer beforehand, which improved the quality of epilayer. Hence, the performances of the LED chips got better. During the growth of LEDs, the InGaN material in the active layer suffered the compressive stress that resulted from the underneath GaN layer. With the increase of bow values, the compressive stress that acted on the InGaN material decreased, which leads to the blue shift of the dominant wavelength.
收稿日期&&修回日期&&网络版发布日期&&
国家自然科学基金(20);国家&863&高科技研究发展项目();中央高校基本科研基金(DUT12LK22,DUT11LK43,DUT11RC(3)45);高等学校博士学科点专项科研基金(45);信息学功能材料国家重点实验室开放基金资助项目
通讯作者: 梁红伟,杜国同
作者Email: hwliang@
参考文献：
[1] Nakamura S, Mukai T, Senoh M. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes [J]. Appl. Phys. Lett., ):.
[2] Niu P J, Chen N J, Li Y X, et al. Investigation on GaN-based semiconductor optoelectronic material and device [J]. Micronanoelectronic Technology(微纳电子技术), ):13-15 (in Chinese).
[3] Liu N X, Wang H B, Liu J P. Growth of p-GaN at low temperature and its properties as light emitting diodes [J]. Acta Phys. Sinica(物理学报), ): (in English).
[4] Trew R J, Shin M W, Gatto V. High power applications for GaN-based devices [J]. Solid-State Electronics, ):.
[5] Karpinski J, Jun J, Porowski S. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN [J]. J. Cryst. Growth, ):1-10.
[6] Wu X H, Speck J S, Wu Z Q. Growth of high quality epitaxial GaN thin films [J]. Physics(物理), ):47-54 (in Chinese).
[7] Leszczynskit M, Suskit T, Perlint P. Lattice constants, thermal expansion and compressibility of gallium nitride [J]. J. Phys. D: Appl. Phys., A):A149-A153.
[8] Kozawa T, Kachi T, Kano H. Thermal stress in GaN epitaxial layers grown on sapphire substrates [J]. J. Appl. Phys., ):.
[9] Freund L B, Sures S H. Thin Film Materials Stress, Defect Formation and Surface Evolution [M]. Berlin: Springer, -138.
[10] Hearne S, Chason E, Han J. Stress evolution during metalorganic chemical vapor deposition of GaN [J]. Appl. Phys. Lett., ):356-358.
[11] Stoney G G. The tension of metallic films deposited by electrolysis [J]. Proc. R. Soc. London Ser. A, ):172-175.
[12] Liu B L, Chen S Y, Wu Z Y, et al. The characterization of InGaN and InGaN/GaN quantum wells grown by LP-MOCVD [J]. J. Optoelectronics·Laser (光电子·激光), ):997-1000 (in Chinese).
[13] Luo Y, Guo W P, Shao J P, et al. A study on wavelength stability of GaN-based blue light emitting diodes [J]. Acta Phys. Sinica (物理学报), ): (in Chinese).
by 发光学报
本刊中的类似文章 上传我的文档
 下载
 收藏
该文档贡献者很忙，什么也没留下。
 下载此文档
正在努力加载中...
Si基SiGe、Ge弛豫衬底生长及其Ge光电探测器研制
下载积分：1598
内容提示：Si基SiGe、Ge弛豫衬底生长及其Ge光电探测器研制
文档格式：PDF|
浏览次数：0|
上传日期： 23:16:44|
文档星级：
该用户还上传了这些文档
Si基SiGe、Ge弛豫衬底生长及其Ge光电探测器研制.PDF
官方公共微信> 产品详情
马可波罗网
Copyright Notice &
马可波罗 版权所有