solution annealing何以笙箫默是什么意思思

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过热器模块制造SA213TP347H弯头水压漏水分析---(定稿)
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基于PMMA的微结构聚合物减反射薄膜
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固溶的英文
英文翻译quench annealingsolid solution:&&&& solid:&&&&dissolve
例句与用法1.Influence of strengthened solution on microstructures of 7075 aluminum alloy强化固溶处理对7075铝合金组织的影响2.The application of xrd analysis on the measuring of the solubility of solid solution在固溶体固溶度测定中的应用3.The electric fields decrease the size of pfz and promote the precipitation of p " phase电场固溶和时效均减小了pfz的尺寸。 4.Effects of solution heat treatment on microstructure in a high purity 7055 aluminum alloy固溶处理对高纯7055铝合金组织的影响5.Effects of the solution cooling rate on the corrosion resistance of 1420 al - li alloy固溶处理冷却速度对1420铝锂合金抗蚀性能的影响6.The effect of heating technique on the size of austenite crystal grain and the solid solution of ti nb固溶及奥氏体晶粒长大的影响7.Study effects of solution treatment on microstructures and properties of 2014 aluminium alloy固溶处理对2014铝合金组织和性能的影响8.Effect of heat - treatment on the structure and properties of chemical plated ni - sn - p coating电场固溶处理对1420铝锂合金组织和性能的影响9.Microstructure and mechanical properties of enhanced solution treated 7075 and 2024 aluminum alloys铝合金的固溶组织与力学性能10.Effect of solution treatment in an electric field on micr ostructure and properties of 1420 al - li alloy固溶处理冷却速度对1420合金性能的影响&&更多例句:&&1&&&&&&&&
相邻词汇热门词汇题名:&Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film
作者:&;&&;&&;&&;&&;&&;&&;&&
通讯作者:&Wang YQ,Chinese Acad Sci,Inst Semicond,State Key Lab Surface Phys,Beijing 100083,Peoples R China.
出版日期:&2002
学科主题:&
关键词:&silicon-&&&&light-&&rap&&CHEMICAL-VAPOR-DEPOSITION;&&AMORPHOUS-SILICON;&&POROUS SILICON;&&SI;&&LUMINESCENCE;&&NANOCRYSTALS;&&SPECTRA;&&SYSTEM
中文摘要:&Silicon-rich silicon oxide (SRSO) films are prepared by plasma-enhanced chemical vapor deposition method at the substrate temperature of 200degreesC. The effect of rapid thermal annealing and hydrogen plasma treatment on tire microstructure and light-emission of SRSO films are investigated in detail using micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectra. It is found that the phase-separation degree of the films decreases with increasing annealing temperature from 300 to 600degreesC, while it increases with increasing annealing temperature from 600 to 900degreesC. The light-emission of the films are enhanced with increasing annealing temperature up to 500degreesC, while it is rapidly reduced when the annealing temperature exceeds 600degreesC. The peak position of the PL spectrum blueshifts by annealing at the temperature of 300degreesC, then it red-shifts with further raising annealing temperature. The following hydrogen plasma treatment results in a disproportionate increase of the PL intensity and a blueshift or redshift of the peak positions, depending on the pristine annealing temperature. It is thought that the size of amorphous silicon clusters, surface structure of the clusters and the distribution of hydrogen in the films can be changed during the annealing procedure. The results indicate that not only cluster size but also surface state of the clusters plays an important role in the determination of electronic structure of the amorphous silicon cluster and recombination process of light-generated carriers.
刊名:&ACTA PHYSICA SINICA
收录类别:&SCI
内容类型:&期刊论文
URI标识:&[]&&
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推荐引用方式:
Wang YQ; Chen WD; Chen CY; Diao HW; Zhang SB; Xu YY; Kong GL; Liao XB .Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film ,ACTA PHYSICA SINICA,):
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